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- Chang, Jiwon
- Exploratory Device Research Lab.
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.number | 14 | - |
| dc.citation.startPage | 145101 | - |
| dc.citation.title | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
| dc.citation.volume | 48 | - |
| dc.contributor.author | Chang, Jiwon | - |
| dc.date.accessioned | 2023-12-22T01:18:23Z | - |
| dc.date.available | 2023-12-22T01:18:23Z | - |
| dc.date.created | 2017-02-08 | - |
| dc.date.issued | 2015-04 | - |
| dc.description.abstract | Transport properties of about 3 nm channel length monolayer MoX2 (X = S, Se, Te) n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) are examined through ballistic full-band quantum transport simulations with atomistic tight-binding Hamiltonians. Our simulations reveal that single gate (SG) monolayer MoX2 MOSFETs with an approximately 2 nm gate underlap exhibit reasonable subthreshold characteristics. From these full-band simulations, we observe channel orientation dependent negative differential resistance (NDR) in the out characteristics in the ballistic transport regime. We discuss and compare NDR properties of monolayer MoX2 n-channel MOSFETs in different transport directions | - |
| dc.identifier.bibliographicCitation | JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.48, no.14, pp.145101 | - |
| dc.identifier.doi | 10.1088/0022-3727/48/14/145101 | - |
| dc.identifier.issn | 0022-3727 | - |
| dc.identifier.scopusid | 2-s2.0-84925428558 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/21320 | - |
| dc.identifier.url | http://iopscience.iop.org/article/10.1088/0022-3727/48/14/145101/meta | - |
| dc.identifier.wosid | 000351857100004 | - |
| dc.language | 영어 | - |
| dc.publisher | IOP PUBLISHING LTD | - |
| dc.title | Simulation of channel orientation dependent transport in ultra-scaled monolayer MoX2 (X = S, Se, Te) n-MOSFETs | - |
| dc.type | Article | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordAuthor | transition metal dichalcogenides | - |
| dc.subject.keywordAuthor | ballistic quantum transport | - |
| dc.subject.keywordAuthor | negative differential resistance | - |
| dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
| dc.subject.keywordPlus | MOS2 TRANSISTORS | - |
| dc.subject.keywordPlus | CONTACTS | - |
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