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Park, Kibog
Emergent Materials & Devices Lab
Research Interests
  • Semiconductor, Metal Oxide Thin Film, Graphene, Non-Volatile Memory, Quantum Transport, Quantum Computing Device

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Schottky Barrier Modulation of Metal/4H-SiC Junction with Thin Interface Spacer Driven by Surface Polarization Charge on 4H-SiC Substrate

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Title
Schottky Barrier Modulation of Metal/4H-SiC Junction with Thin Interface Spacer Driven by Surface Polarization Charge on 4H-SiC Substrate
Author
Choi, GahyunYoon, Hoon HahnJung, SungchulJeon, YoungeunLee, Jung YongBahng, WookPark, Kibog
Issue Date
2015-12
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.107, no.25, pp.252101-1 - 252101-5
Abstract
The Au/Ni/Al2O3/4H-SiC junction with the Al2O3 film as a thin spacer layer was found to show the electrical characteristics of a typical rectifying Schottky contact, which is considered to be due to the leakiness of the spacer layer. The Schottky barrier of the junction was measured to be higher than an Au/Ni/4H-SiC junction with no spacer layer. It is believed that the negative surface bound charge originating from the spontaneous polarization of 4H-SiC causes the Schottky barrier increase. The use of a thin spacer layer can be an efficient experimental method to modulate Schottky barriers of metal/4H-SiC junctions.
URI
https://scholarworks.unist.ac.kr/handle/201301/18138
URL
http://scitation.aip.org/content/aip/journal/apl/107/25/10.1063/1.4938070
DOI
10.1063/1.4938070
ISSN
0003-6951
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