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Park, Kibog
Emergent Materials & Devices Lab
Research Interests
  • Semiconductor, Metal Oxide Thin Film, Graphene, Non-Volatile Memory, Quantum Transport, Quantum Computing Device

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Schottky Barrier Modulation of Metal/4H-SiC Junction with Thin Interface Spacer Driven by Surface Polarization Charge on 4H-SiC Substrate

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dc.contributor.author Choi, Gahyun ko
dc.contributor.author Yoon, Hoon Hahn ko
dc.contributor.author Jung, Sungchul ko
dc.contributor.author Jeon, Youngeun ko
dc.contributor.author Lee, Jung Yong ko
dc.contributor.author Bahng, Wook ko
dc.contributor.author Park, Kibog ko
dc.date.available 2016-01-13T02:35:47Z -
dc.date.created 2016-01-11 ko
dc.date.issued 2015-12 ko
dc.identifier.citation APPLIED PHYSICS LETTERS, v.107, no.25, pp.252101-1 - 252101-5 ko
dc.identifier.issn 0003-6951 ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/18138 -
dc.description.abstract The Au/Ni/Al2O3/4H-SiC junction with the Al2O3 film as a thin spacer layer was found to show the electrical characteristics of a typical rectifying Schottky contact, which is considered to be due to the leakiness of the spacer layer. The Schottky barrier of the junction was measured to be higher than an Au/Ni/4H-SiC junction with no spacer layer. It is believed that the negative surface bound charge originating from the spontaneous polarization of 4H-SiC causes the Schottky barrier increase. The use of a thin spacer layer can be an efficient experimental method to modulate Schottky barriers of metal/4H-SiC junctions. ko
dc.description.statementofresponsibility open -
dc.language 영어 ko
dc.publisher AMER INST PHYSICS ko
dc.title Schottky Barrier Modulation of Metal/4H-SiC Junction with Thin Interface Spacer Driven by Surface Polarization Charge on 4H-SiC Substrate ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-84953329707 ko
dc.identifier.wosid 000368442100018 ko
dc.type.rims ART ko
dc.description.wostc 0 *
dc.date.tcdate 2016-02-11 *
dc.identifier.doi 10.1063/1.4938070 ko
dc.identifier.url http://scitation.aip.org/content/aip/journal/apl/107/25/10.1063/1.4938070 ko
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