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Quantum well behavior of single stacking fault 3C inclusions in 4H-SiC p-i-n diodes studied by ballistic electron emission microscopy File

Park, Kibog , Pelz, JP , Grim, J , Skowronski, M

Article Issue Date2005-12 View143
Schottky Barrier Modulation of Metal/4H-SiC Junction with Thin Interface Spacer Driven by Surface Polarization Charge on 4H-SiC Substrate File

Choi, Gahyun , Yoon, Hoon Hahn , Jung, Sungchul , Jeon, Youngeun , Lee, Jung Yong , Bahng, Wook , Park, Kibog

Article Issue Date2015-12 View146
Valence band structure and band offset of 3C- and 4H-SiC studied by ballistic hole emission microscopy File

Park, Kibog , Ding, Y. , Pelz, J. P. , Neudeck, P. G. , Trunek, A. J.

Article Issue Date2006-07 View122
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