Valence band structure and band offset of 3C- and 4H-SiC studied by ballistic hole emission microscopy
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- Title
- Valence band structure and band offset of 3C- and 4H-SiC studied by ballistic hole emission microscopy
- Author
- Park, Kibog; Ding, Y.; Pelz, J. P.; Neudeck, P. G.; Trunek, A. J.
- Keywords
- Ballistic hole emission microscopy (BHEM); Band offsets; Crystal fields; Valence band maximum (VBM)
- Issue Date
- 2006-07
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.89, no.4, pp.1 - 3
- Abstract
- p-type Schottky barriers in Pt/3C-SiC contacts have been measured using ballistic hole emission microscopy (BHEM) and estimated to be ∼0.06 eV higher than identically prepared Pt/p-type 4H-SiC contacts. This indicates the 3C-SiC valence band maximum (VBM) is ∼0.06 eV below the 4H-SiC VBM, consistent with the calculated ∼0.05 eV type-II valence band offset between these polytypes. We also observe no evidence of an additional VBM in 3C-SiC, which supports the proposal that the second VBM observed in BHEM spectra on 4H-SiC is a crystal-field split VBM located ∼110 meV below the highest VBM.
- URI
- ; Go to Link
- DOI
- 10.1063/1.2218302
- ISSN
- 0003-6951
- Appears in Collections:
- PHY_Journal Papers
- Files in This Item:
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