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- Park, Kibog
- Emergent Materials & Devices Lab.
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Valence band structure and band offset of 3C- and 4H-SiC studied by ballistic hole emission microscopy
- Author(s)
- Park, Kibog, Ding, Y., Pelz, J. P., Neudeck, P. G., Trunek, A. J.
- Issued Date
- 2006-07
- Citation
- APPLIED PHYSICS LETTERS, v.89, no.4, pp.1 - 3
- Abstract
- p-type Schottky barriers in Pt/3C-SiC contacts have been measured using ballistic hole emission microscopy (BHEM) and estimated to be ∼0.06 eV higher than identically prepared Pt/p-type 4H-SiC contacts. This indicates the 3C-SiC valence band maximum (VBM) is ∼0.06 eV below the 4H-SiC VBM, consistent with the calculated ∼0.05 eV type-II valence band offset between these polytypes. We also observe no evidence of an additional VBM in 3C-SiC, which supports the proposal that the second VBM observed in BHEM spectra on 4H-SiC is a crystal-field split VBM located ∼110 meV below the highest VBM.
- Publisher
- AMER INST PHYSICS
- ISSN
- 0003-6951
- Keyword
- ELECTRONIC-PROPERTIES, 4H, POLARIZATION, LUMINESCENCE, INTERFACES, GROWTH, FIELD, 6H, HEXAGONAL SIC POLYTYPES
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