2017-03 | Chemical Vapor-Deposited Hexagonal Boron Nitride as a Scalable Template for High-Performance Organic Field-Effect Transistors | Lee, Tae Hoon; Kim, Kwanpyo; Kim, Gwangwoo, et al | ARTICLE | 1193 |
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2017-03 | Synthesis and Properties of Two Dimensional Doped Transition Metal Dichalcogenides | Yoon, Aram; Lee, Zonghoon | ARTICLE | 2010 |
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2017-01 | Atomic Scale Study on Growth and Heteroepitaxy of ZnO Monolayer on Graphene | Hong, Hyo-Ki; Jo, Junhyeon; Hwang, Daeyeon, et al | ARTICLE | 1548 |
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2017-01 | A high-performance transparent graphene/vertically aligned carbon nanotube (VACNT) hybrid electrode for neural interfacing | Jeong, Du Won; Kim, Gook Hwa; Kim, Na Yeon, et al | ARTICLE | 1011 |
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2016-12 | Simultaneous improvement in electrical and thermal properties of interface-engineered BiSbTe nanostructured thermoelectric materials | Jo, Seungki; Park, Sung Hoon; Ban, Hyeong Woo, et al | ARTICLE | 1214 |
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2016-12 | High surface area carbon from polyacrylonitrile for high performance electrochemical capacitive energy storage | Gupta, Kishor; Liu, Tianyuan; Kavian, Reza, et al | ARTICLE | 1415 |
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2016-11 | Very high frequency plasma reactant for atomic layer deposition | Oh, Il-Kwon; Yoo, Gilsang; Yoon, Chang Mo, et al | ARTICLE | 952 |
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2016-11 | Birch-Type Hydrogenation of Few-Layer Graphenes: Products and Mechanistic Implications | Zhang, Xu; Huang, Yuan; Chen, Shanshan, et al | ARTICLE | 1128 |
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2016-10 | The Origin of Improved Electrical Double-Layer Capacitance by Inclusion of Topological Defects and Dopants in Graphene for Supercapacitors | Chen, Jiafeng; Han, Yulei; Kong, Xianghua, et al | ARTICLE | 1012 |
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2016-10 | High-resolution, electrohydrodynamic inkjet printing of stretchable, metal oxide semiconductor transistors with high performances | Kim, S,-Y.; Kim, K.; Hwang, Y.H., et al | ARTICLE | 1357 |
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2016-10 | Effect of Al2O3 deposition on performance of top-gated monolayer MoS2 based field effect transistor | Song, Jeong-Gyu; Kim, Seok Jin; Woo, Whang Je, et al | ARTICLE | 1117 |
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2016-09 | Determination of the thickness and orientation of few-layer tungsten ditelluride using polarized Raman spectroscopy | Kim, Minjung; Han, Songhee; Kim, Jung Hwa, et al | ARTICLE | 715 |
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2016-08 | Surface treatment process applicable to next generation graphene-based electronics | Kim, Ki Seok; Hong, Hyo-Ki; Jung, Haneal, et al | ARTICLE | 1054 |
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2016-05 | Creating Pores on Graphene Platelets by Low-Temperature KOH Activation for Enhanced Electrochemical Performance | Wu, Shuilin; Chen, Guanxing; Kim, Nayeon, et al | ARTICLE | 952 |
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2016-05 | Wafer-scale monolayer MoS2 grown by chemical vapor deposition using a reaction of MoO3 and H2S | Kim, Youngchan; Bark, Hunyoung; Ryu, Gyeong Hee, et al | ARTICLE | 1204 |
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2016-03 | Microstructural study on degradation mechanism of layered LiNi0.6Co0.2Mn0.2O2 cathode materials by analytical transmission electron microscopy | Kim, Na Yeon; Yim, Taeeun; Song, Jun Ho, et al | ARTICLE | 1089 |
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2016-03 | Line-defect mediated formation of hole and Mo clusters in monolayer molybdenum disulfide | Ryu, Gyeong Hee; Lee, Jongyeong; Kim, Na Yeon, et al | ARTICLE | 1135 |
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2016-03 | Uniform, large-area self-limiting layer synthesis of tungsten diselenide | Park, Kyunam; Kim, Youngjun; Song, Jeong-Gyu, et al | ARTICLE | 1028 |
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2016-02 | Raman Signatures of Polytypism in Molybdenum Disulfide | Lee, Jae-Ung; Kim, Kangwon; Han, Songhee, et al | ARTICLE | 972 |
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2016-01 | Self-Limiting Layer Synthesis of Transition Metal Dichalcogenides | Kim, Youngjun; Song, Jeong-Gyu; Park, Yong Ju, et al | ARTICLE | 1269 |
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