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Lee, Zonghoon
Atomic-Scale Electron Microscopy (ASEM) Lab
Research Interests
  • Advanced Transmission Electron Microscopy (TEM/STEM), in Situ TEM, graphene, 2D materials, low-dimensional crystals, nanostructured materials

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Understanding Interface-Controlled Resistance Drift in Superlattice Phase Change Memory

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Title
Understanding Interface-Controlled Resistance Drift in Superlattice Phase Change Memory
Author
Wu, XiangjinKhan, Asir IntisarRamesh, PranavPerez, ChristopherKim, KangsikLee, ZonghoonSaraswat, KrishnaGoodson, Kenneth E.Wong, H-S PhilipPop, Eric
Issue Date
2022-10
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE ELECTRON DEVICE LETTERS, v.43, no.10, pp.1669 - 1672
Abstract
Resistance drift in phase change memory (PCM) reduces the accuracy of analog computing applications such as neural network inference. Recently, PCMs based on superlattice (SL) phase change layers have shown low resistance drift, however the origin of this low drift remains unexplored. Here, we uncover that resistance drift in SL-PCM based on alternating layers of Sb2Te3 and Ge2Sb2Te5 (GST) is controlled by the number of SL interfaces as well as the degree of SL intermixing. Temperature-dependent measurements reveal smaller and more stable activation energy upon annealing (thus suppressed structural relaxation) in our SL-PCM vs. control GST devices, accounting for the low resistance drift. By controlling SL interfaces, we achieve low resistance drift coefficient nu < 0.01 in these SL-PCMs, maintained after extensive cycling and at various read voltages and intervals - showing robustness required for analog computing with PCM.
URI
https://scholarworks.unist.ac.kr/handle/201301/60012
DOI
10.1109/LED.2022.3203971
ISSN
0741-3106
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