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Jeong, Hu Young
UNIST Central Research Facilities (UCRF)
Research Interests
  • Soft material characterization such as graphene using a low kV Cs-corrected TEM
  • Insitu-TEM characterization of carbon-based materials using nanofactory STM holder for Li-ion battery application
  • Structural characterization of mesoporous materials using SEM & TEM
  • Interface analysis between various oxides and metals through Cs-corrected (S)TEM
  • Resistive switching mechanism of graphene oxide thin films for RRAM application

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Atomic variations in digital alloy InGaP/InGaAlP multiple quantum wells due to thermal treatment

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Title
Atomic variations in digital alloy InGaP/InGaAlP multiple quantum wells due to thermal treatment
Author
Shin, Jae WonJeong, Hu YoungYoo, Seung JoLee, Seok-HoonHan, Jun HeeLee, Jeong YongAhn, Jun SungPark, Chang YoungPark, Kwang WookLee, Yong-TakKim, Jin-GyuKim, Tae Whan
Issue Date
2014-11
Publisher
JAPAN SOC APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v.53, no.11, pp.11
Abstract
High-resolution transmission electron microscopy (HRTEM) images showed that the lattice distortion of as-grown InGaP/InGaAlP multiple quantum wells (MQWs) appeared to be due to the small thickness of the alloyed layers, and that their distortion was relaxed owing to the high atomic mobility. High-angle annular dark-field scanning transmission electron microscopy images demonstrated that the chemical intermixing of Ga and Al atoms between the InAlP and InGaP alloy layers due to thermal annealing relaxed the stress of the InGaAlP layer. The atomic arrangements of the as-grown and annealed MQWs are described on the basis of the experimental results.
URI
https://scholarworks.unist.ac.kr/handle/201301/9323
DOI
10.7567/JJAP.53.115201
ISSN
0021-4922
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UCRF_Journal Papers
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