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Jeong, Hu Young
UNIST Central Research Facilities (UCRF)
Research Interests
  • Soft material characterization such as graphene using a low kV Cs-corrected TEM
  • Insitu-TEM characterization of carbon-based materials using nanofactory STM holder for Li-ion battery application
  • Structural characterization of mesoporous materials using SEM & TEM
  • Interface analysis between various oxides and metals through Cs-corrected (S)TEM
  • Resistive switching mechanism of graphene oxide thin films for RRAM application

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Self-Assembly-Induced Formation of High-Density Silicon Oxide Memristor Nanostructures on Graphene and Metal Electrodes

Cited 22 times inthomson ciCited 17 times inthomson ci
Title
Self-Assembly-Induced Formation of High-Density Silicon Oxide Memristor Nanostructures on Graphene and Metal Electrodes
Author
Park, Woon IkYoon, Jong MoonPark, MoonkyuLee, JinsupKim, Sung KyuJeong, Jae WonKim, KyunghoJeong, Hu YoungJeon, SeokwooNo, Kwang SooLee, Jeong YongJung, Yeon Sik
Keywords
Block copolymer; graphene; nanodot; Pt; resistive memory; self-assembly
Issue Date
2012-03
Publisher
AMER CHEMICAL SOC
Citation
NANO LETTERS, v.12, no.3, pp.1235 - 1240
Abstract
We report the direct formation of ordered memristor nanostructures on metal and graphene electrodes by a block copolymer self-assembly process. Optimized surface functionalization provides stacking structures of Si-containing block copolymer thin films to generate uniform memristor device structures. Both the silicon oxide film and nanodot memristors, which were formed by the plasma oxidation of the self-assembled block copolymer thin films, presented unipolar switching behaviors with appropriate set and reset voltages for resistive memory applications. This approach offers a very convenient pathway to fabricate ultrahigh-density resistive memory devices without relying on high-cost lithography and pattern-transfer processes.
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DOI
10.1021/nl203597d
ISSN
1530-6984
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UCRF_Journal Papers
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