Self-Assembly-Induced Formation of High-Density Silicon Oxide Memristor Nanostructures on Graphene and Metal Electrodes
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- Self-Assembly-Induced Formation of High-Density Silicon Oxide Memristor Nanostructures on Graphene and Metal Electrodes
- Park, Woon Ik; Yoon, Jong Moon; Park, Moonkyu; Lee, Jinsup; Kim, Sung Kyu; Jeong, Jae Won; Kim, Kyungho; Jeong, Hu Young; Jeon, Seokwoo; No, Kwang Soo; Lee, Jeong Yong; Jung, Yeon Sik
- Block copolymer; graphene; nanodot; Pt; resistive memory; self-assembly
- Issue Date
- AMER CHEMICAL SOC
- NANO LETTERS, v.12, no.3, pp.1235 - 1240
- We report the direct formation of ordered memristor nanostructures on metal and graphene electrodes by a block copolymer self-assembly process. Optimized surface functionalization provides stacking structures of Si-containing block copolymer thin films to generate uniform memristor device structures. Both the silicon oxide film and nanodot memristors, which were formed by the plasma oxidation of the self-assembled block copolymer thin films, presented unipolar switching behaviors with appropriate set and reset voltages for resistive memory applications. This approach offers a very convenient pathway to fabricate ultrahigh-density resistive memory devices without relying on high-cost lithography and pattern-transfer processes.
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