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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 1240 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 1235 | - |
dc.citation.title | NANO LETTERS | - |
dc.citation.volume | 12 | - |
dc.contributor.author | Park, Woon Ik | - |
dc.contributor.author | Yoon, Jong Moon | - |
dc.contributor.author | Park, Moonkyu | - |
dc.contributor.author | Lee, Jinsup | - |
dc.contributor.author | Kim, Sung Kyu | - |
dc.contributor.author | Jeong, Jae Won | - |
dc.contributor.author | Kim, Kyungho | - |
dc.contributor.author | Jeong, Hu Young | - |
dc.contributor.author | Jeon, Seokwoo | - |
dc.contributor.author | No, Kwang Soo | - |
dc.contributor.author | Lee, Jeong Yong | - |
dc.contributor.author | Jung, Yeon Sik | - |
dc.date.accessioned | 2023-12-22T05:16:16Z | - |
dc.date.available | 2023-12-22T05:16:16Z | - |
dc.date.created | 2014-11-18 | - |
dc.date.issued | 2012-03 | - |
dc.description.abstract | We report the direct formation of ordered memristor nanostructures on metal and graphene electrodes by a block copolymer self-assembly process. Optimized surface functionalization provides stacking structures of Si-containing block copolymer thin films to generate uniform memristor device structures. Both the silicon oxide film and nanodot memristors, which were formed by the plasma oxidation of the self-assembled block copolymer thin films, presented unipolar switching behaviors with appropriate set and reset voltages for resistive memory applications. This approach offers a very convenient pathway to fabricate ultrahigh-density resistive memory devices without relying on high-cost lithography and pattern-transfer processes. | - |
dc.identifier.bibliographicCitation | NANO LETTERS, v.12, no.3, pp.1235 - 1240 | - |
dc.identifier.doi | 10.1021/nl203597d | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.scopusid | 2-s2.0-84858167699 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/9101 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84858167699 | - |
dc.identifier.wosid | 000301406800020 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Self-Assembly-Induced Formation of High-Density Silicon Oxide Memristor Nanostructures on Graphene and Metal Electrodes | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Block copolymer | - |
dc.subject.keywordAuthor | self-assembly | - |
dc.subject.keywordAuthor | resistive memory | - |
dc.subject.keywordAuthor | nanodot | - |
dc.subject.keywordAuthor | Pt | - |
dc.subject.keywordAuthor | graphene | - |
dc.subject.keywordPlus | BLOCK-COPOLYMER LITHOGRAPHY | - |
dc.subject.keywordPlus | SEQUENTIAL INFILTRATION SYNTHESIS | - |
dc.subject.keywordPlus | RESISTIVE SWITCHES | - |
dc.subject.keywordPlus | PATTERNED MEDIA | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | POLYDIMETHYLSILOXANE | - |
dc.subject.keywordPlus | GRAPHOEPITAXY | - |
dc.subject.keywordPlus | TEMPLATES | - |
dc.subject.keywordPlus | NANOLITHOGRAPHY | - |
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