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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 2465 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 2462 | - |
dc.citation.title | Physica Status Solidi (C) Current Topics in Solid State Physics | - |
dc.citation.volume | 1 | - |
dc.contributor.author | Na, H | - |
dc.contributor.author | Kim, HJ | - |
dc.contributor.author | Kwon, Soon-Yong | - |
dc.contributor.author | Sone, C | - |
dc.contributor.author | Park, Y | - |
dc.contributor.author | Yoon, E | - |
dc.date.accessioned | 2023-12-22T10:43:16Z | - |
dc.date.available | 2023-12-22T10:43:16Z | - |
dc.date.created | 2014-11-20 | - |
dc.date.issued | 2004-09 | - |
dc.description.abstract | 20 nm GaNAs epilayers were grown on GaN/sapphire by metalorganic chemical vapor deposition. As growth temperature decreased from 720 to 565°C, it was found that As concentration was increased from 1.3 × 1020 and saturated at about 5-6 × 1020 cm-3. GaAs-like GaNAs islands were formed on GaN at 530°C. In case of GaNAs epilayers grown at 565 and 600°C, GaN-like GaNAs phases were observed by high-resolution X-ray diffraction (XRD) and low angle XRD. By low angle XRD and high-resolution TEM with electron nano-beam diffraction patterns, the FCC-stacked region in wurtzite matrix was clearly observed in thin GaNAs layers. We propose that this structural nonuniformity in GaNAs might be caused by the nonuniform distribution of As concentration. | - |
dc.identifier.bibliographicCitation | Physica Status Solidi (C) Current Topics in Solid State Physics, v.1, no.10, pp.2462 - 2465 | - |
dc.identifier.doi | 10.1002/pssc.200405010 | - |
dc.identifier.issn | 1862-6351 | - |
dc.identifier.scopusid | 2-s2.0-7044239318 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/9092 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=7044239318 | - |
dc.identifier.wosid | 000225187100017 | - |
dc.language | 영어 | - |
dc.publisher | Wiley-VCH Verlag | - |
dc.title | The formation of cubic GaNAs phase during the growth of thin GaNAs epilayers on GaN at low temperatures by metalorganic chemical vapor deposition | - |
dc.type | Article | - |
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