Bipolar resistive switching in amorphous titanium oxide thin film
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- Bipolar resistive switching in amorphous titanium oxide thin film
- Jeong, Hu Young; Lee, Jeong Yong; Ryu, Min-Ki; Choi, Sung-Yool
- Aluminum electrodes; Amorphous titanium oxide; Electrical measurement; Fermi energy levels; High temperature; Ohmic currents; Oxygen ions; Plasma-enhanced atomic layer deposition; Resistive switching; Resistive switching mechanisms; Temperature dependent
- Issue Date
- WILEY-V C H VERLAG GMBH
- PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.4, no.1-2, pp.28 - 30
- Using isothermal and temperature-dependent electrical measurements, we investigated the resistive switching mechanism of amorphous titanium oxide thin films deposited by plasma enhanced atomic layer deposition (PEALD) between two aluminum electrodes. We found a bipolar resistive switching (BRS) behavior only in the high temperature region (>140 K) and two activation energies (0.055 eV and 0.13 eV) for thecarrier transport in the ohmic current regime. We attribute this discrepancy to the change of the bulk TiO2 Fermi energy level (Ef) induced by the reversible movement of oxygen ions in the vicinity of the Al top electrode region.
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