BROWSE

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Jeong, Hu Young
UNIST Central Research Facilities (UCRF)
Research Interests
  • Soft material characterization such as graphene using a low kV Cs-corrected TEM
  • Insitu-TEM characterization of carbon-based materials using nanofactory STM holder for Li-ion battery application
  • Structural characterization of mesoporous materials using SEM & TEM
  • Interface analysis between various oxides and metals through Cs-corrected (S)TEM
  • Resistive switching mechanism of graphene oxide thin films for RRAM application

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Bipolar resistive switching in amorphous titanium oxide thin film

Cited 23 times inthomson ciCited 24 times inthomson ci
Title
Bipolar resistive switching in amorphous titanium oxide thin film
Author
Jeong, Hu YoungLee, Jeong YongRyu, Min-KiChoi, Sung-Yool
Keywords
Aluminum electrodes; Amorphous titanium oxide; Electrical measurement; Fermi energy levels; High temperature; Ohmic currents; Oxygen ions; Plasma-enhanced atomic layer deposition; Resistive switching; Resistive switching mechanisms; Temperature dependent
Issue Date
2010-02
Publisher
WILEY-V C H VERLAG GMBH
Citation
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.4, no.1-2, pp.28 - 30
Abstract
Using isothermal and temperature-dependent electrical measurements, we investigated the resistive switching mechanism of amorphous titanium oxide thin films deposited by plasma enhanced atomic layer deposition (PEALD) between two aluminum electrodes. We found a bipolar resistive switching (BRS) behavior only in the high temperature region (>140 K) and two activation energies (0.055 eV and 0.13 eV) for thecarrier transport in the ohmic current regime. We attribute this discrepancy to the change of the bulk TiO2 Fermi energy level (Ef) induced by the reversible movement of oxygen ions in the vicinity of the Al top electrode region.
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DOI
10.1002/pssr.200903383
ISSN
1862-6254
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SE_Journal Papers
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