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정후영

Jeong, Hu Young
UCRF Electron Microscopy group
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dc.citation.endPage 30 -
dc.citation.number 1-2 -
dc.citation.startPage 28 -
dc.citation.title PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS -
dc.citation.volume 4 -
dc.contributor.author Jeong, Hu Young -
dc.contributor.author Lee, Jeong Yong -
dc.contributor.author Ryu, Min-Ki -
dc.contributor.author Choi, Sung-Yool -
dc.date.accessioned 2023-12-22T07:13:17Z -
dc.date.available 2023-12-22T07:13:17Z -
dc.date.created 2014-11-19 -
dc.date.issued 2010-02 -
dc.description.abstract Using isothermal and temperature-dependent electrical measurements, we investigated the resistive switching mechanism of amorphous titanium oxide thin films deposited by plasma enhanced atomic layer deposition (PEALD) between two aluminum electrodes. We found a bipolar resistive switching (BRS) behavior only in the high temperature region (>140 K) and two activation energies (0.055 eV and 0.13 eV) for thecarrier transport in the ohmic current regime. We attribute this discrepancy to the change of the bulk TiO2 Fermi energy level (Ef) induced by the reversible movement of oxygen ions in the vicinity of the Al top electrode region. -
dc.identifier.bibliographicCitation PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.4, no.1-2, pp.28 - 30 -
dc.identifier.doi 10.1002/pssr.200903383 -
dc.identifier.issn 1862-6254 -
dc.identifier.scopusid 2-s2.0-76449109599 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/9088 -
dc.identifier.url http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=76449109599 -
dc.identifier.wosid 000275226400019 -
dc.language 영어 -
dc.publisher WILEY-V C H VERLAG GMBH -
dc.title Bipolar resistive switching in amorphous titanium oxide thin film -
dc.type Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -

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