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Jeong, Hu Young
UCRF Electron Microscopy group
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A low-temperature-grown TiO2-based device for the flexible stacked RRAM application

Author(s)
Jeong, Hu YoungKim, Yong InLee, Jeong YongChoi, Sung-Yool
Issued Date
2010-03
DOI
10.1088/0957-4484/21/11/115203
URI
https://scholarworks.unist.ac.kr/handle/201301/9087
Fulltext
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=77349115766
Citation
NANOTECHNOLOGY, v.21, no.11
Abstract
Flexible TiO2 crossbar memory device arrays were fabricated on plastic substrates using amorphous titanium oxide thin films grown by the low-temperature plasma-enhanced atomic layer deposition method. Al/ TiO 2 /Al memory cells on polyethersulfone(PES) showed an enhanced endurance property (up to 104cycles) and low switching voltages compared to the cells on rigid substrates. The multi-stacked memory arrays were constructed by forming the additional Al/ TiO2 /Al layer on the first memory device layer. Memory cells on each layer exhibited stable switching characteristics and mechanical robustness without interlayer cell-to-cell interference.
Publisher
IOP PUBLISHING LTD
ISSN
0957-4484

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