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Jeong, Hu Young
UNIST Central Research Facilities (UCRF)
Research Interests
  • Soft material characterization such as graphene using a low kV Cs-corrected TEM
  • Insitu-TEM characterization of carbon-based materials using nanofactory STM holder for Li-ion battery application
  • Structural characterization of mesoporous materials using SEM & TEM
  • Interface analysis between various oxides and metals through Cs-corrected (S)TEM
  • Resistive switching mechanism of graphene oxide thin films for RRAM application

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A low-temperature-grown TiO2-based device for the flexible stacked RRAM application

Cited 40 times inthomson ciCited 28 times inthomson ci
Title
A low-temperature-grown TiO2-based device for the flexible stacked RRAM application
Author
Jeong, Hu YoungKim, Yong InLee, Jeong YongChoi, Sung-Yool
Keywords
Amorphous titanium oxide; Cell interference; Cross-bar memories; Low temperature plasmas; Low temperatures; Mechanical robustness; Memory array; Memory cell; Memory device; Plastic substrates; Polyethersulfones; Rigid substrates; Switching characteristics; Switching voltages; TiO
Issue Date
2010-03
Publisher
IOP PUBLISHING LTD
Citation
NANOTECHNOLOGY, v.21, no.11, pp. -
Abstract
Flexible TiO2 crossbar memory device arrays were fabricated on plastic substrates using amorphous titanium oxide thin films grown by the low-temperature plasma-enhanced atomic layer deposition method. Al/ TiO 2 /Al memory cells on polyethersulfone(PES) showed an enhanced endurance property (up to 104cycles) and low switching voltages compared to the cells on rigid substrates. The multi-stacked memory arrays were constructed by forming the additional Al/ TiO2 /Al layer on the first memory device layer. Memory cells on each layer exhibited stable switching characteristics and mechanical robustness without interlayer cell-to-cell interference.
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DOI
10.1088/0957-4484/21/11/115203
ISSN
0957-4484
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SE_Journal Papers
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