dc.citation.number |
11 |
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dc.citation.title |
NANOTECHNOLOGY |
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dc.citation.volume |
21 |
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dc.contributor.author |
Jeong, Hu Young |
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dc.contributor.author |
Kim, Yong In |
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dc.contributor.author |
Lee, Jeong Yong |
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dc.contributor.author |
Choi, Sung-Yool |
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dc.date.accessioned |
2023-12-22T07:11:49Z |
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dc.date.available |
2023-12-22T07:11:49Z |
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dc.date.created |
2014-11-19 |
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dc.date.issued |
2010-03 |
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dc.description.abstract |
Flexible TiO2 crossbar memory device arrays were fabricated on plastic substrates using amorphous titanium oxide thin films grown by the low-temperature plasma-enhanced atomic layer deposition method. Al/ TiO 2 /Al memory cells on polyethersulfone(PES) showed an enhanced endurance property (up to 104cycles) and low switching voltages compared to the cells on rigid substrates. The multi-stacked memory arrays were constructed by forming the additional Al/ TiO2 /Al layer on the first memory device layer. Memory cells on each layer exhibited stable switching characteristics and mechanical robustness without interlayer cell-to-cell interference. |
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dc.identifier.bibliographicCitation |
NANOTECHNOLOGY, v.21, no.11 |
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dc.identifier.doi |
10.1088/0957-4484/21/11/115203 |
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dc.identifier.issn |
0957-4484 |
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dc.identifier.scopusid |
2-s2.0-77349115766 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/9087 |
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dc.identifier.url |
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=77349115766 |
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dc.identifier.wosid |
000274936700006 |
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dc.language |
영어 |
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dc.publisher |
IOP PUBLISHING LTD |
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dc.title |
A low-temperature-grown TiO2-based device for the flexible stacked RRAM application |
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dc.type |
Article |
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dc.description.journalRegisteredClass |
scie |
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dc.description.journalRegisteredClass |
scopus |
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