8th International Conference on Advanced Electromaterials
Abstract
For memory devices, the controllable resistivity of semiconductors has been used to store, read, and process digital information. These operations are accomplished by applying voltage, heat, or wavelength of light. However, the resistive nature always accompanies heating the cell during the read process and suffers reducing the power consumption. In contrast, highly insulating dielectrics could prevent congenital issues in the resistive weighted memory devices. Recently, we proposed a way to exploit the dielectric constant of a ferroelectric insulator to store and record information by controlling ternary states. In this talk, we present the mechanism behind this dielectric memory phenomenon and introduce our approach for implementing ternary polar states.