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오윤석

Oh, Yoon Seok
Laboratory for Strong Correlation in Quantum Materials
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dc.citation.conferencePlace KO -
dc.citation.title 8th International Conference on Advanced Electromaterials -
dc.contributor.author Oh, Yoon Seok -
dc.date.accessioned 2026-01-09T18:56:14Z -
dc.date.available 2026-01-09T18:56:14Z -
dc.date.created 2026-01-09 -
dc.date.issued 2025-11-26 -
dc.description.abstract For memory devices, the controllable resistivity of semiconductors has been used to store, read, and process digital information. These operations are accomplished by applying voltage, heat, or wavelength of light. However, the resistive nature always accompanies heating the cell during the read process and suffers reducing the power consumption. In contrast, highly insulating dielectrics could prevent congenital issues in the resistive weighted memory devices. Recently, we proposed a way to exploit the dielectric constant of a ferroelectric insulator to store and record information by controlling ternary states. In this talk, we present the mechanism behind this dielectric memory phenomenon and introduce our approach for implementing ternary polar states. -
dc.identifier.bibliographicCitation 8th International Conference on Advanced Electromaterials -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/90196 -
dc.publisher 한국전기전자재료학회 -
dc.title A Functional Dielectric Insulator -
dc.type Conference Paper -
dc.date.conferenceDate 2025-11-25 -

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