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Jeong, Hu Young
UNIST Central Research Facilities (UCRF)
Research Interests
  • Soft material characterization such as graphene using a low kV Cs-corrected TEM
  • Insitu-TEM characterization of carbon-based materials using nanofactory STM holder for Li-ion battery application
  • Structural characterization of mesoporous materials using SEM & TEM
  • Interface analysis between various oxides and metals through Cs-corrected (S)TEM
  • Resistive switching mechanism of graphene oxide thin films for RRAM application

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Electrical current suppression in Pd-doped vanadium pentoxide nanowires caused by reduction in PdO due to hydrogen exposure

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Title
Electrical current suppression in Pd-doped vanadium pentoxide nanowires caused by reduction in PdO due to hydrogen exposure
Author
Kim, Byung HoonOh, Soon-YoungJeong, Hu YoungYu, Han YoungYun, Yong JuKim, Yark YeonHong, Won G.Lee, Jeong YongKim, Hae Jin
Keywords
Doped carbons; Electrical current; Hydrogen exposure; Hydrogen gas; PD nano particle; Vanadium pentoxide; Work function change
Issue Date
2010-04
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.96, no.16, pp. -
Abstract
Pd nanoparticle-doped vanadium pentoxide nanowires (Pd-VONs) were synthesized. Electrical current suppression was observed when the Pd-VON was exposed to hydrogen gas, which cannot be explained by the work function changes mentioned in previous report such as Pd-doped carbon nanotubes and SnO 2 nanowires. Using the x-ray photoelectron spectroscopy, we found that the reduction in PdO due to hydrogen exposure plays an important role in the current suppression of the Pd-VON.
URI
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DOI
10.1063/1.3394003
ISSN
0003-6951
Appears in Collections:
UCRF_Journal Papers
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