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백정민

Baik, Jeong Min
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Short range scattering effect of InAs quantum dots in the transport properties of two dimensional electron gas

Author(s)
Kannan, E. S.Kim, Gil-HoKumar, SanjeevFarrer, I.Ritchie, D. A.Son, Jun HoBaik, Jeong MinLee, Jong-LamYoun, D. H.Kang, Kwang-Yong
Issued Date
2007-04
DOI
10.1063/1.2720704
URI
https://scholarworks.unist.ac.kr/handle/201301/8855
Fulltext
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=34247247837
Citation
APPLIED PHYSICS LETTERS, v.90, no.15
Abstract
Short range interaction between two dimensional electron gas (2DEG) and InAs quantum dots embedded in the GaAs/AlGaAs quantum well is investigated as a function of carrier density. At low carrier density the interaction is significantly characterized by a transport to quantum lifetime ratio of less than 5. However, with an increase in carrier density, quantum lifetime is observed to undergo a sharp transition from 0.17 to 0.25 ps. This is attributed to the screening of short range repulsive scattering due to InAs quantum dots by the 2DEG.
Publisher
AMER INST PHYSICS
ISSN
0003-6951
Keyword
ALGAN/GAN HETEROSTRUCTURESCENTERSTIME

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