Short range scattering effect of InAs quantum dots in the transport properties of two dimensional electron gas
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- Short range scattering effect of InAs quantum dots in the transport properties of two dimensional electron gas
- Kannan, E. S.; Kim, Gil-Ho; Kumar, Sanjeev; Farrer, I.; Ritchie, D. A.; Son, Jun Ho; Baik, Jeong Min; Lee, Jong-Lam; Youn, D. H.; Kang, Kwang-Yong
- ALGAN/GAN HETEROSTRUCTURES; CENTERS; TIME
- Issue Date
- AMER INST PHYSICS
- APPLIED PHYSICS LETTERS, v.90, no.15, pp. -
- Short range interaction between two dimensional electron gas (2DEG) and InAs quantum dots embedded in the GaAs/AlGaAs quantum well is investigated as a function of carrier density. At low carrier density the interaction is significantly characterized by a transport to quantum lifetime ratio of less than 5. However, with an increase in carrier density, quantum lifetime is observed to undergo a sharp transition from 0.17 to 0.25 ps. This is attributed to the screening of short range repulsive scattering due to InAs quantum dots by the 2DEG.
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