Short range interaction between two dimensional electron gas (2DEG) and InAs quantum dots embedded in the GaAs/AlGaAs quantum well is investigated as a function of carrier density. At low carrier density the interaction is significantly characterized by a transport to quantum lifetime ratio of less than 5. However, with an increase in carrier density, quantum lifetime is observed to undergo a sharp transition from 0.17 to 0.25 ps. This is attributed to the screening of short range repulsive scattering due to InAs quantum dots by the 2DEG.