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Baik, Jeong Min
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dc.citation.number 15 -
dc.citation.title APPLIED PHYSICS LETTERS -
dc.citation.volume 90 -
dc.contributor.author Kannan, E. S. -
dc.contributor.author Kim, Gil-Ho -
dc.contributor.author Kumar, Sanjeev -
dc.contributor.author Farrer, I. -
dc.contributor.author Ritchie, D. A. -
dc.contributor.author Son, Jun Ho -
dc.contributor.author Baik, Jeong Min -
dc.contributor.author Lee, Jong-Lam -
dc.contributor.author Youn, D. H. -
dc.contributor.author Kang, Kwang-Yong -
dc.date.accessioned 2023-12-22T09:36:08Z -
dc.date.available 2023-12-22T09:36:08Z -
dc.date.created 2014-11-17 -
dc.date.issued 2007-04 -
dc.description.abstract Short range interaction between two dimensional electron gas (2DEG) and InAs quantum dots embedded in the GaAs/AlGaAs quantum well is investigated as a function of carrier density. At low carrier density the interaction is significantly characterized by a transport to quantum lifetime ratio of less than 5. However, with an increase in carrier density, quantum lifetime is observed to undergo a sharp transition from 0.17 to 0.25 ps. This is attributed to the screening of short range repulsive scattering due to InAs quantum dots by the 2DEG. -
dc.identifier.bibliographicCitation APPLIED PHYSICS LETTERS, v.90, no.15 -
dc.identifier.doi 10.1063/1.2720704 -
dc.identifier.issn 0003-6951 -
dc.identifier.scopusid 2-s2.0-34247247837 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/8855 -
dc.identifier.url http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=34247247837 -
dc.identifier.wosid 000245690700060 -
dc.language 영어 -
dc.publisher AMER INST PHYSICS -
dc.title Short range scattering effect of InAs quantum dots in the transport properties of two dimensional electron gas -
dc.type Article -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordPlus ALGAN/GAN HETEROSTRUCTURES -
dc.subject.keywordPlus CENTERS -
dc.subject.keywordPlus TIME -

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