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Woo, Kyung Seok
Emerging Semiconductor Technology Laboratory
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A Combination of a Volatile-Memristor-Based True Random-Number Generator and a Nonlinear-Feedback Shift Register for High-Speed Encryption

Author(s)
Woo, Kyung SeokWang, YongminKim, YuminKim, JihunKim, WoohyunHwang, Cheol Seong
Issued Date
2020-05
DOI
10.1002/aelm.201901117
URI
https://scholarworks.unist.ac.kr/handle/201301/87684
Citation
ADVANCED ELECTRONIC MATERIALS, v.6, no.5, pp.1901117
Abstract
A true random-number generator (TRNG) and a nonlinear feedback shift register (NFSR) are combined to create a new type of TRNG. This TRNG is based on the intrinsic stochasticity of threshold switching behavior in a Pt/HfO2/TiN memristor and an NFSR circuit. Considering the transition rate of the hopping process, the stochasticity of the delay time can be attributed to the phonon-assisted hopping process. This novel TRNG passes all 15 National Institute of Standards and Technology randomness tests without post-processing steps, proving its performance as a hardware security application. By combining the TRNG with the NFSR, the bit generation rate is further improved, allowing it to be used for high-speed applications.
Publisher
WILEY
ISSN
2199-160X
Keyword (Author)
threshold switchingmemristorstrue random number generatorselectron trappingnonlinear-feedback shift registers

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