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| DC Field | Value | Language |
|---|---|---|
| dc.citation.number | 5 | - |
| dc.citation.startPage | 1901117 | - |
| dc.citation.title | ADVANCED ELECTRONIC MATERIALS | - |
| dc.citation.volume | 6 | - |
| dc.contributor.author | Woo, Kyung Seok | - |
| dc.contributor.author | Wang, Yongmin | - |
| dc.contributor.author | Kim, Yumin | - |
| dc.contributor.author | Kim, Jihun | - |
| dc.contributor.author | Kim, Woohyun | - |
| dc.contributor.author | Hwang, Cheol Seong | - |
| dc.date.accessioned | 2025-08-06T17:30:02Z | - |
| dc.date.available | 2025-08-06T17:30:02Z | - |
| dc.date.created | 2025-08-06 | - |
| dc.date.issued | 2020-05 | - |
| dc.description.abstract | A true random-number generator (TRNG) and a nonlinear feedback shift register (NFSR) are combined to create a new type of TRNG. This TRNG is based on the intrinsic stochasticity of threshold switching behavior in a Pt/HfO2/TiN memristor and an NFSR circuit. Considering the transition rate of the hopping process, the stochasticity of the delay time can be attributed to the phonon-assisted hopping process. This novel TRNG passes all 15 National Institute of Standards and Technology randomness tests without post-processing steps, proving its performance as a hardware security application. By combining the TRNG with the NFSR, the bit generation rate is further improved, allowing it to be used for high-speed applications. | - |
| dc.identifier.bibliographicCitation | ADVANCED ELECTRONIC MATERIALS, v.6, no.5, pp.1901117 | - |
| dc.identifier.doi | 10.1002/aelm.201901117 | - |
| dc.identifier.issn | 2199-160X | - |
| dc.identifier.scopusid | 2-s2.0-85080910365 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/87684 | - |
| dc.identifier.wosid | 000533986800003 | - |
| dc.language | 영어 | - |
| dc.publisher | WILEY | - |
| dc.title | A Combination of a Volatile-Memristor-Based True Random-Number Generator and a Nonlinear-Feedback Shift Register for High-Speed Encryption | - |
| dc.type | Article | - |
| dc.description.isOpenAccess | FALSE | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics; Materials Science; Physics | - |
| dc.type.docType | Article | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordAuthor | threshold switching | - |
| dc.subject.keywordAuthor | memristors | - |
| dc.subject.keywordAuthor | true random number generators | - |
| dc.subject.keywordAuthor | electron trapping | - |
| dc.subject.keywordAuthor | nonlinear-feedback shift registers | - |
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