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- Choe, Wonyoung
- Laboratory for Sustainable Future
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Anisotropy and large magnetoresistance in the narrow-gap semiconductor FeSb2 -: art. no. 155205
- Author(s)
- Petrovic ,C, Kim, JW, Budko, SL, Goldman, AI, Canfield, PC, Choe, Wonyoung, Miller, GJ
- Issued Date
- 2003-04
- Citation
- PHYSICAL REVIEW B, v.67, no.15, pp.155205
- Abstract
- A study of the anisotropy in magnetic, transport, and magnetotransport properties of FeSb2 has been made on large single crystals grown from Sb flux. Magnetic susceptibility of FeSb2 shows diamagnetic to paramagnetic crossover around 100 K. Electrical transport along two axes is semiconducting, whereas the third axis exhibits a metal-semiconductor crossover at temperature T-cr which is sensitive to current alignment and ranges between 40 and 80 K. In H = 70 kOe semiconducting transport is restored for T<300 K, resulting in large magnetoresistance [ρ(70 kOe) - ρ(0)]/ρ(0) = 2200% in the crossover temperature range.
- Publisher
- AMERICAN PHYSICAL SOC
- ISSN
- 1098-0121
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