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최원영

Choe, Wonyoung
Laboratory for Sustainable Future
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dc.citation.number 15 -
dc.citation.startPage 155205 -
dc.citation.title PHYSICAL REVIEW B -
dc.citation.volume 67 -
dc.contributor.author Petrovic ,C -
dc.contributor.author Kim, JW -
dc.contributor.author Budko, SL -
dc.contributor.author Goldman, AI -
dc.contributor.author Canfield, PC -
dc.contributor.author Choe, Wonyoung -
dc.contributor.author Miller, GJ -
dc.date.accessioned 2025-02-12T16:05:07Z -
dc.date.available 2025-02-12T16:05:07Z -
dc.date.created 2025-02-12 -
dc.date.issued 2003-04 -
dc.description.abstract A study of the anisotropy in magnetic, transport, and magnetotransport properties of FeSb2 has been made on large single crystals grown from Sb flux. Magnetic susceptibility of FeSb2 shows diamagnetic to paramagnetic crossover around 100 K. Electrical transport along two axes is semiconducting, whereas the third axis exhibits a metal-semiconductor crossover at temperature T-cr which is sensitive to current alignment and ranges between 40 and 80 K. In H = 70 kOe semiconducting transport is restored for T<300 K, resulting in large magnetoresistance [ρ(70 kOe) - ρ(0)]/ρ(0) = 2200% in the crossover temperature range. -
dc.identifier.bibliographicCitation PHYSICAL REVIEW B, v.67, no.15, pp.155205 -
dc.identifier.doi 10.1103/PhysRevB.67.155205 -
dc.identifier.issn 1098-0121 -
dc.identifier.scopusid 2-s2.0-84861915116 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/86219 -
dc.identifier.wosid 000182741400044 -
dc.language 영어 -
dc.publisher AMERICAN PHYSICAL SOC -
dc.title Anisotropy and large magnetoresistance in the narrow-gap semiconductor FeSb2 -: art. no. 155205 -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Chemistry, Multidisciplinary -
dc.relation.journalResearchArea Chemistry -
dc.type.docType Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -

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