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- Jeong, Changwook
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Enhancement of In2O3 Field-Effect Mobility Up To 152 cm2V-1s-1 Using HZO-Based Higher-k Linear Dielectric
- Author(s)
- Lin, Zehao, Niu, Chang, Jang, Hyeongjun, Kim, Taehyun, Jeong, Changwook, Ye, Peide
- Issued Date
- 2024-06-10
- Citation
- IEEE Symposium on VLSI Technology
- Publisher
- IEEE
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