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- Jeong, Changwook
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.conferencePlace | US | - |
| dc.citation.title | IEEE Symposium on VLSI Technology | - |
| dc.contributor.author | Lin, Zehao | - |
| dc.contributor.author | Niu, Chang | - |
| dc.contributor.author | Jang, Hyeongjun | - |
| dc.contributor.author | Kim, Taehyun | - |
| dc.contributor.author | Jeong, Changwook | - |
| dc.contributor.author | Ye, Peide | - |
| dc.date.accessioned | 2025-01-06T18:05:08Z | - |
| dc.date.available | 2025-01-06T18:05:08Z | - |
| dc.date.created | 2025-01-06 | - |
| dc.date.issued | 2024-06-10 | - |
| dc.identifier.bibliographicCitation | IEEE Symposium on VLSI Technology | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/85803 | - |
| dc.publisher | IEEE | - |
| dc.title | Enhancement of In2O3 Field-Effect Mobility Up To 152 cm2V-1s-1 Using HZO-Based Higher-k Linear Dielectric | - |
| dc.type | Conference Paper | - |
| dc.date.conferenceDate | 2024-06-08 | - |
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