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박노정

Park, Noejung
Computational Physics & Electronic Structure Lab.
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A field effect transistor fabricated with metallic single-walled carbon nanotubes

Author(s)
Na, PSPark, NoejungKim, JKim, HKong, KJChang, HLee, JO
Issued Date
2006-04
DOI
10.1080/15363830600663438
URI
https://scholarworks.unist.ac.kr/handle/201301/8556
Fulltext
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=33745135436
Citation
FULLERENES NANOTUBES AND CARBON NANOSTRUCTURES, v.14, no.2-3, pp.141 - 149
Abstract
We report novel transport properties of the individual single-walled carbon nanotube (SWNT) field effect transistors (FETs) decorated with the protein (streptavidin)-coated nanoparticles. Upon adsorption of the protein-coated nanoparticles at the metal-nanotube contact, the metallic SWNT devices abruptly exhibit a p -type semiconducting behavior. In the case of semiconducting SWNT devices, the adsorptions of protein-coated nanoparticles make the gating more effective, resulting in a far suppressed off-state leakage current as well as an enhanced on-state p -channel current. Through the ab initio electronic structure calculations, it is suggested that such an apparent metal-semiconductor transition may be due to the intervening charged species in the contact area, originated from the surface of the proteins. Noting the separation of the semiconducting nanotubes from metallic ones would be a formidable task; we suggest that the device concept here could be another breakthrough for the nanotube-based electronic devices, in which the nanotubes are not necessarily semi-conducting.
Publisher
TAYLOR & FRANCIS INC
ISSN
1536-383X
Keyword (Author)
carbon nanotubefield effect transistorelectronic device
Keyword
CONTACT RESISTANCEDEVICESSEPARATIONCIRCUITSMEMORY

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