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Park, Noejung
Computational Physics & Electronic Structure Lab.
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dc.citation.endPage 149 -
dc.citation.number 2-3 -
dc.citation.startPage 141 -
dc.citation.title FULLERENES NANOTUBES AND CARBON NANOSTRUCTURES -
dc.citation.volume 14 -
dc.contributor.author Na, PS -
dc.contributor.author Park, Noejung -
dc.contributor.author Kim, J -
dc.contributor.author Kim, H -
dc.contributor.author Kong, KJ -
dc.contributor.author Chang, H -
dc.contributor.author Lee, JO -
dc.date.accessioned 2023-12-22T10:07:12Z -
dc.date.available 2023-12-22T10:07:12Z -
dc.date.created 2014-11-10 -
dc.date.issued 2006-04 -
dc.description.abstract We report novel transport properties of the individual single-walled carbon nanotube (SWNT) field effect transistors (FETs) decorated with the protein (streptavidin)-coated nanoparticles. Upon adsorption of the protein-coated nanoparticles at the metal-nanotube contact, the metallic SWNT devices abruptly exhibit a p -type semiconducting behavior. In the case of semiconducting SWNT devices, the adsorptions of protein-coated nanoparticles make the gating more effective, resulting in a far suppressed off-state leakage current as well as an enhanced on-state p -channel current. Through the ab initio electronic structure calculations, it is suggested that such an apparent metal-semiconductor transition may be due to the intervening charged species in the contact area, originated from the surface of the proteins. Noting the separation of the semiconducting nanotubes from metallic ones would be a formidable task; we suggest that the device concept here could be another breakthrough for the nanotube-based electronic devices, in which the nanotubes are not necessarily semi-conducting. -
dc.identifier.bibliographicCitation FULLERENES NANOTUBES AND CARBON NANOSTRUCTURES, v.14, no.2-3, pp.141 - 149 -
dc.identifier.doi 10.1080/15363830600663438 -
dc.identifier.issn 1536-383X -
dc.identifier.scopusid 2-s2.0-33745135436 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/8556 -
dc.identifier.url http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=33745135436 -
dc.identifier.wosid 000238762900003 -
dc.language 영어 -
dc.publisher TAYLOR & FRANCIS INC -
dc.title A field effect transistor fabricated with metallic single-walled carbon nanotubes -
dc.type Article -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor carbon nanotube -
dc.subject.keywordAuthor field effect transistor -
dc.subject.keywordAuthor electronic device -
dc.subject.keywordPlus CONTACT RESISTANCE -
dc.subject.keywordPlus DEVICES -
dc.subject.keywordPlus SEPARATION -
dc.subject.keywordPlus CIRCUITS -
dc.subject.keywordPlus MEMORY -

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