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Yoon, Tae-Sik
Nano Semiconductor Research Lab.
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Non-Volatile Charge-Trap Memory Characteristics with Low-Temperature Atomic Layer Deposited HfO2−x Charge-Trap Layer and Enhanced Hole Trapping by Rapid Thermal Annealing

Author(s)
Noh, TaeyunYoon, Tae-Sik
Issued Date
2024-12-12
URI
https://scholarworks.unist.ac.kr/handle/201301/85378
Citation
SISC 2024
Publisher
IEEE

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