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- Yoon, Tae-Sik
- Nano Semiconductor Research Lab.
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.conferencePlace | US | - |
| dc.citation.conferencePlace | 샌디에이고 | - |
| dc.citation.title | SISC 2024 | - |
| dc.contributor.author | Noh, Taeyun | - |
| dc.contributor.author | Yoon, Tae-Sik | - |
| dc.date.accessioned | 2024-12-30T15:05:07Z | - |
| dc.date.available | 2024-12-30T15:05:07Z | - |
| dc.date.created | 2024-12-30 | - |
| dc.date.issued | 2024-12-12 | - |
| dc.identifier.bibliographicCitation | SISC 2024 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/85378 | - |
| dc.language | 영어 | - |
| dc.publisher | IEEE | - |
| dc.title | Non-Volatile Charge-Trap Memory Characteristics with Low-Temperature Atomic Layer Deposited HfO2−x Charge-Trap Layer and Enhanced Hole Trapping by Rapid Thermal Annealing | - |
| dc.type | Conference Paper | - |
| dc.date.conferenceDate | 2024-12-11 | - |
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