Controllable modification of transport properties of single-walled carbon nanotube field effect transistors with in situ Al decoration
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- Controllable modification of transport properties of single-walled carbon nanotube field effect transistors with in situ Al decoration
- Kim, Hyo-Suk; Kim, Byoung-Kye; Kim, Ju-Jin; Lee, Jeong-O; Park, Noejung
- Issue Date
- AMER INST PHYSICS
- APPLIED PHYSICS LETTERS, v.91, no.15, pp. -
- We use an in situ Al decoration technique to control the transport characteristics of single-walled carbon nanotube field effect transistors (SWNT-FETs). Al nanoparticle decoration in a high vacuum caused the devices to change from p -type to n -type FETs, and subsequent exposure to the ambient atmosphere induced a gradual recovery of p -type character. In comparison with the bare SWNT-FETs under high vacuum, the channel-open devices with decorated Al particles exhibited reduced current under ambient conditions. However, selective Al decoration only at the contact resulted in an improved p -type current in ambient air.
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