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Park, Noejung
Computational Physics & Electronic Structure Lab
Research Interests
  • Electronic structure calculation, computational physics, computational material science

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Controllable modification of transport properties of single-walled carbon nanotube field effect transistors with in situ Al decoration

Cited 18 times inthomson ciCited 24 times inthomson ci
Title
Controllable modification of transport properties of single-walled carbon nanotube field effect transistors with in situ Al decoration
Author
Kim, Hyo-SukKim, Byoung-KyeKim, Ju-JinLee, Jeong-OPark, Noejung
Issue Date
2007-10
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.91, no.15, pp. -
Abstract
We use an in situ Al decoration technique to control the transport characteristics of single-walled carbon nanotube field effect transistors (SWNT-FETs). Al nanoparticle decoration in a high vacuum caused the devices to change from p -type to n -type FETs, and subsequent exposure to the ambient atmosphere induced a gradual recovery of p -type character. In comparison with the bare SWNT-FETs under high vacuum, the channel-open devices with decorated Al particles exhibited reduced current under ambient conditions. However, selective Al decoration only at the contact resulted in an improved p -type current in ambient air.
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DOI
10.1063/1.2798590
ISSN
0003-6951
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PHY_Journal Papers
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