dc.citation.number |
15 |
- |
dc.citation.title |
APPLIED PHYSICS LETTERS |
- |
dc.citation.volume |
91 |
- |
dc.contributor.author |
Kim, Hyo-Suk |
- |
dc.contributor.author |
Kim, Byoung-Kye |
- |
dc.contributor.author |
Kim, Ju-Jin |
- |
dc.contributor.author |
Lee, Jeong-O |
- |
dc.contributor.author |
Park, Noejung |
- |
dc.date.accessioned |
2023-12-22T09:09:20Z |
- |
dc.date.available |
2023-12-22T09:09:20Z |
- |
dc.date.created |
2014-11-10 |
- |
dc.date.issued |
2007-10 |
- |
dc.description.abstract |
We use an in situ Al decoration technique to control the transport characteristics of single-walled carbon nanotube field effect transistors (SWNT-FETs). Al nanoparticle decoration in a high vacuum caused the devices to change from p -type to n -type FETs, and subsequent exposure to the ambient atmosphere induced a gradual recovery of p -type character. In comparison with the bare SWNT-FETs under high vacuum, the channel-open devices with decorated Al particles exhibited reduced current under ambient conditions. However, selective Al decoration only at the contact resulted in an improved p -type current in ambient air. |
- |
dc.identifier.bibliographicCitation |
APPLIED PHYSICS LETTERS, v.91, no.15 |
- |
dc.identifier.doi |
10.1063/1.2798590 |
- |
dc.identifier.issn |
0003-6951 |
- |
dc.identifier.scopusid |
2-s2.0-35248895264 |
- |
dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/8507 |
- |
dc.identifier.url |
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=35248895264 |
- |
dc.identifier.wosid |
000250140700058 |
- |
dc.language |
영어 |
- |
dc.publisher |
AMER INST PHYSICS |
- |
dc.title |
Controllable modification of transport properties of single-walled carbon nanotube field effect transistors with in situ Al decoration |
- |
dc.type |
Article |
- |
dc.description.journalRegisteredClass |
scopus |
- |