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Park, Noejung
Computational Physics & Electronic Structure Lab.
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Air-stable n-type operation of Gd-contacted carbon nanotube field effect transistors

Author(s)
Kim, Hyo-SukJeon, Eun-KyoungKim, Ju-JinSo, Hye-MiChang, HyunjuLee, Jeong-OPark, Noejung
Issued Date
2008-09
DOI
10.1063/1.2990642
URI
https://scholarworks.unist.ac.kr/handle/201301/8503
Fulltext
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=52949154292
Citation
APPLIED PHYSICS LETTERS, v.93, no.12
Abstract
We report air-stable n -type operations of the single-walled carbon nanotube field effect transistors (SWNT-FETs) fabricated with Gd electrodes. Unlike previously reported n -type SWNT-FETs, our devices maintained their n -type operation characteristics in ambient atmosphere for more than two months. The shallow Gd films with a thickness below 20 nm are corroded by environmental oxygen, whereas the well-contacted Gd-SWNT interfaces underneath the thick Gd layers are protected from contaminations by air molecules. Theoretical studies based on the first-principles electronic structure calculations confirm that Gd layers have an excellent binding affinity to the SWNTs.
Publisher
AMER INST PHYSICS
ISSN
0003-6951
Keyword
CIRCUITS

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