Air-stable n-type operation of Gd-contacted carbon nanotube field effect transistors
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- Air-stable n-type operation of Gd-contacted carbon nanotube field effect transistors
- Kim, Hyo-Suk; Jeon, Eun-Kyoung; Kim, Ju-Jin; So, Hye-Mi; Chang, Hyunju; Lee, Jeong-O; Park, Noejung
- Issue Date
- AMER INST PHYSICS
- APPLIED PHYSICS LETTERS, v.93, no.12, pp. -
- We report air-stable n -type operations of the single-walled carbon nanotube field effect transistors (SWNT-FETs) fabricated with Gd electrodes. Unlike previously reported n -type SWNT-FETs, our devices maintained their n -type operation characteristics in ambient atmosphere for more than two months. The shallow Gd films with a thickness below 20 nm are corroded by environmental oxygen, whereas the well-contacted Gd-SWNT interfaces underneath the thick Gd layers are protected from contaminations by air molecules. Theoretical studies based on the first-principles electronic structure calculations confirm that Gd layers have an excellent binding affinity to the SWNTs.
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