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DC Field | Value | Language |
---|---|---|
dc.citation.number | 12 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 93 | - |
dc.contributor.author | Kim, Hyo-Suk | - |
dc.contributor.author | Jeon, Eun-Kyoung | - |
dc.contributor.author | Kim, Ju-Jin | - |
dc.contributor.author | So, Hye-Mi | - |
dc.contributor.author | Chang, Hyunju | - |
dc.contributor.author | Lee, Jeong-O | - |
dc.contributor.author | Park, Noejung | - |
dc.date.accessioned | 2023-12-22T08:36:59Z | - |
dc.date.available | 2023-12-22T08:36:59Z | - |
dc.date.created | 2014-11-10 | - |
dc.date.issued | 2008-09 | - |
dc.description.abstract | We report air-stable n -type operations of the single-walled carbon nanotube field effect transistors (SWNT-FETs) fabricated with Gd electrodes. Unlike previously reported n -type SWNT-FETs, our devices maintained their n -type operation characteristics in ambient atmosphere for more than two months. The shallow Gd films with a thickness below 20 nm are corroded by environmental oxygen, whereas the well-contacted Gd-SWNT interfaces underneath the thick Gd layers are protected from contaminations by air molecules. Theoretical studies based on the first-principles electronic structure calculations confirm that Gd layers have an excellent binding affinity to the SWNTs. | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.93, no.12 | - |
dc.identifier.doi | 10.1063/1.2990642 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.scopusid | 2-s2.0-52949154292 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/8503 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=52949154292 | - |
dc.identifier.wosid | 000259799100067 | - |
dc.language | 영어 | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Air-stable n-type operation of Gd-contacted carbon nanotube field effect transistors | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | CIRCUITS | - |
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