File Download

There are no files associated with this item.

  • Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)

Views & Downloads

Detailed Information

Cited time in webofscience Cited time in scopus
Metadata Downloads

Comparison of etching characteristics of low GWP gases to replace c-C4F8

Author(s)
Ju, Jeonga
Advisor
Jeong, Hongsik
Issued Date
2024-02
URI
https://scholarworks.unist.ac.kr/handle/201301/82233 http://unist.dcollection.net/common/orgView/200000744767
Abstract
Perfluorocarbons such as CF4 and c-C4F8, which are currently used in the semiconductor industry, have a high GWP value and it is essential to reduce them in order to achieve carbon neutrality. Currently, many methods such as replacement, optimization, recycling, and abate are being studied for this purpose, but replacement is a sustainable and fundamental solution. This paper discusses the definition and calculation of GWP and introduces the characteristics of low GWP gas. After that, the overall research trend of etching research using low GWP gas will be mentioned, and the experimental progress and analysis will be described.
Publisher
Ulsan National Institute of Science and Technology

qrcode

Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.