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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | Jeong, Hongsik | - |
| dc.contributor.author | Ju, Jeonga | - |
| dc.date.accessioned | 2024-04-11T16:20:18Z | - |
| dc.date.available | 2024-04-11T16:20:18Z | - |
| dc.date.issued | 2024-02 | - |
| dc.description.abstract | Perfluorocarbons such as CF4 and c-C4F8, which are currently used in the semiconductor industry, have a high GWP value and it is essential to reduce them in order to achieve carbon neutrality. Currently, many methods such as replacement, optimization, recycling, and abate are being studied for this purpose, but replacement is a sustainable and fundamental solution. This paper discusses the definition and calculation of GWP and introduces the characteristics of low GWP gas. After that, the overall research trend of etching research using low GWP gas will be mentioned, and the experimental progress and analysis will be described. | - |
| dc.description.degree | Master | - |
| dc.description | Graduate School of Semiconductor Materials and Devices Engineering | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/82233 | - |
| dc.identifier.uri | http://unist.dcollection.net/common/orgView/200000744767 | - |
| dc.language | ENG | - |
| dc.publisher | Ulsan National Institute of Science and Technology | - |
| dc.rights.embargoReleaseDate | 9999-12-31 | - |
| dc.rights.embargoReleaseTerms | 9999-12-31 | - |
| dc.subject | Semiconductor process | - |
| dc.subject | Dry etching | - |
| dc.subject | GWP (Global Warming Potential) | - |
| dc.subject | Eco-friendly etching | - |
| dc.title | Comparison of etching characteristics of low GWP gases to replace c-C4F8 | - |
| dc.type | Thesis | - |
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