Site-Specific Growth of Anisotropic 2D Materials on Atomically Flat Graphene Surface without Dangling Bonds

Abstract

Rhenium disulfide, a new family of two-dimensional transition metal dichalcogenides, has received growing interests in polarization-sensitive optoelectronic devices owing to its unique anisotropic atomic structure. Synthesis of high-quality rhenium disulfide along the in-plane direction is one of the most important issues for its widespread application into functional devices. However, in-plane growth of rhenium disulfide is still challenging due to its weak interlayer coupling effect, leading to preferred growth in the out-of-plane direction. Here, the rhenium disulfide is successfully grown along the in-plane direction on atomically smooth and chemically inert graphene surface without developing any structural defects by chemical vapor deposition process, resulting in high-quality graphene/rhenium disulfide heterostructure. Furthermore, the patterning of vertical heterostructure was achived using the site-specific growth of rhenium disulfide. These results will provide valuable information for better understanding the growth behavior of van der Waals heterostructure based on two-dimensional materials.