dc.citation.conferencePlace |
KO |
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dc.citation.title |
2019년 한국물리학회 봄 학술논문발표회 및 제 95회 정기총회 |
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dc.contributor.author |
서지형 |
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dc.contributor.author |
이정현 |
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dc.contributor.author |
정규정 |
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dc.contributor.author |
박혜성 |
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dc.date.accessioned |
2024-02-01T00:36:20Z |
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dc.date.available |
2024-02-01T00:36:20Z |
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dc.date.created |
2020-01-06 |
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dc.date.issued |
2019-04-25 |
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dc.description.abstract |
Rhenium disulfide, a new family of two-dimensional transition metal dichalcogenides, has received growing interests in polarization-sensitive optoelectronic devices owing to its unique anisotropic atomic structure. Synthesis of high-quality rhenium disulfide along the in-plane direction is one of the most important issues for its widespread application into functional devices. However, in-plane growth of rhenium disulfide is still challenging due to its weak interlayer coupling effect, leading to preferred growth in the out-of-plane direction. Here, the rhenium disulfide is successfully grown along the in-plane direction on atomically smooth and chemically inert graphene surface without developing any structural defects by chemical vapor deposition process, resulting in high-quality graphene/rhenium disulfide heterostructure. Furthermore, the patterning of vertical heterostructure was achived using the site-specific growth of rhenium disulfide. These results will provide valuable information for better understanding the growth behavior of van der Waals heterostructure based on two-dimensional materials. |
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dc.identifier.bibliographicCitation |
2019년 한국물리학회 봄 학술논문발표회 및 제 95회 정기총회 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/79932 |
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dc.publisher |
한국물리학회 |
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dc.title |
Site-Specific Growth of Anisotropic 2D Materials on Atomically Flat Graphene Surface without Dangling Bonds |
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dc.type |
Conference Paper |
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dc.date.conferenceDate |
2019-04-24 |
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