Single-electron MOS memory with a defined quantum dot based on conventional VLSI technology

Abstract

The room temperature-operation of a single-electron metal-oxide- semiconductor (MOS) memory with a defined quantum dot fabricated by sidewall patterning technique based on conventional VLSI technologies has been demonstrated without the aid of electron beam (EB) lithography for the first time. Sidewall patterning technique shows a good uniformity and controllability as well as high throughput. The fabricated memory devices show quantized threshold voltage shifts at room temperature. Time-dependant measurement of drain current shows discrete electron injection to the quantum dot. In addition, fabricated devices have good subthreshold swing and retention characteristics