dc.citation.endPage |
614 |
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dc.citation.number |
10 |
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dc.citation.startPage |
612 |
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dc.citation.title |
IEEE ELECTRON DEVICE LETTERS |
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dc.citation.volume |
23 |
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dc.contributor.author |
Kim, Kyung Rok |
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dc.contributor.author |
Kim, DH |
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dc.contributor.author |
Sung, SK |
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dc.contributor.author |
Lee, JD |
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dc.contributor.author |
Park, BG |
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dc.date.accessioned |
2023-12-22T11:36:47Z |
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dc.date.available |
2023-12-22T11:36:47Z |
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dc.date.created |
2014-10-28 |
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dc.date.issued |
2002-10 |
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dc.description.abstract |
Negative-differential transconductance characteristics at room temperature with a peak-to-valley ratio of about two were observed in 30-nm square-channel silicon-on-insulator nMOSFETs with degenerately doped bodies. High channel-doping concentration creates the degeneracy in the p-type body of the self-aligned SOI MOSFET and consequently, enables band-to-band tunneling between degenerate body and source-drain. I DS-V DS curves in the negative drain bias region also show band-to-band tunneling current as in the case of forward-biased p-n tunnel junctions. |
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dc.identifier.bibliographicCitation |
IEEE ELECTRON DEVICE LETTERS, v.23, no.10, pp.612 - 614 |
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dc.identifier.doi |
10.1109/LED.2002.803769 |
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dc.identifier.issn |
0741-3106 |
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dc.identifier.scopusid |
2-s2.0-0036805861 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/7936 |
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dc.identifier.url |
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0036805861 |
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dc.identifier.wosid |
000178497900014 |
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dc.language |
영어 |
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dc.publisher |
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
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dc.title |
Negative-differential transconductance characteristics at room temperature in 30-nm square-channel SOI nMOSFETs with a degenerately doped body |
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dc.type |
Article |
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dc.description.journalRegisteredClass |
scopus |
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