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Kim, Kyung Rok
Nano-Electronic Emerging Devices (NEEDs) Lab
Research Interests
  • Nano-CMOS, neuromorphic device, terahertz (THz) plasma-wave transistor (PWT)

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Negative-differential transconductance characteristics at room temperature in 30-nm square-channel SOI nMOSFETs with a degenerately doped body

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dc.contributor.author Kim, Kyung Rok ko
dc.contributor.author Kim, DH ko
dc.contributor.author Sung, SK ko
dc.contributor.author Lee, JD ko
dc.contributor.author Park, BG ko
dc.date.available 2014-10-29T00:21:39Z -
dc.date.created 2014-10-28 ko
dc.date.issued 2002-10 -
dc.identifier.citation IEEE ELECTRON DEVICE LETTERS, v.23, no.10, pp.612 - 614 ko
dc.identifier.issn 0741-3106 ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/7936 -
dc.identifier.uri http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0036805861 ko
dc.description.abstract Negative-differential transconductance characteristics at room temperature with a peak-to-valley ratio of about two were observed in 30-nm square-channel silicon-on-insulator nMOSFETs with degenerately doped bodies. High channel-doping concentration creates the degeneracy in the p-type body of the self-aligned SOI MOSFET and consequently, enables band-to-band tunneling between degenerate body and source-drain. I DS-V DS curves in the negative drain bias region also show band-to-band tunneling current as in the case of forward-biased p-n tunnel junctions. ko
dc.description.statementofresponsibility close -
dc.language ENG ko
dc.publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC ko
dc.subject Band-to-band tunneling ko
dc.subject Degeneracy ko
dc.subject Negative-differential transconductance ko
dc.subject P-n tunnel junctions ko
dc.subject Silicon-on-insulator (SOI) nMOSFETs ko
dc.title Negative-differential transconductance characteristics at room temperature in 30-nm square-channel SOI nMOSFETs with a degenerately doped body ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-0036805861 ko
dc.identifier.wosid 000178497900014 ko
dc.type.rims ART ko
dc.description.wostc 8 *
dc.description.scopustc 11 *
dc.date.tcdate 2015-05-06 *
dc.date.scptcdate 2014-10-28 *
dc.identifier.doi 10.1109/LED.2002.803769 ko
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