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Kim, Kyung Rok
Nano-Electronic Emerging Devices (NEEDs) Lab
Research Interests
  • Nano-CMOS, neuromorphic device, terahertz (THz) plasma-wave transistor (PWT)

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Single-electron transistors based on gate-induced Si island for single-electron logic application

DC Field Value Language
dc.contributor.author Kim, DH ko
dc.contributor.author Sung, SK ko
dc.contributor.author Kim, Kyung Rok ko
dc.contributor.author Lee, JD ko
dc.contributor.author Park, BG ko
dc.date.available 2014-10-29T00:21:36Z -
dc.date.created 2014-10-28 ko
dc.date.issued 2002-12 -
dc.identifier.citation IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.1, no.4, pp.170 - 175 ko
dc.identifier.issn 1536-125X ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/7934 -
dc.identifier.uri http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=33646056038 ko
dc.description.abstract The island size dependence of the capacitance components of single-electron transistors (SETs) based on gate-induced Si islands was extracted from the electrical characteristics. In the fabricated SETs, the sidewall gate tunes the electrically induced tunnel junctions, and controls the phase of the Coulomb oscillation. The capacitance between the sidewall gate and the Si island extracted from the Coulomb oscillation phase shift of the SETs with sidewall depletion gates on a silicon-on-insulator nanowire was independent of the Si island size, which is consistent with the device structure. The Coulomb oscillation phase shift of the fabricated SETs has the potential for a complementary operation. As a possible application to single-electron logic, the complementary single-electron inverter and binary decision diagram operation on the basis of the Coulomb oscillation phase shift and the tunable tunnel junctions were demonstrated. ko
dc.description.statementofresponsibility close -
dc.language ENG ko
dc.publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC ko
dc.subject Binary decision diagram ko
dc.subject Gate-induced island ko
dc.subject Sidewall gate ko
dc.subject Single-electron inverter ko
dc.subject SOI ko
dc.title Single-electron transistors based on gate-induced Si island for single-electron logic application ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-33646056038 ko
dc.identifier.wosid 000182374000002 ko
dc.type.rims ART ko
dc.description.wostc 19 *
dc.description.scopustc 11 *
dc.date.tcdate 2015-05-06 *
dc.date.scptcdate 2014-10-28 *
dc.identifier.doi 10.1109/TNANO.2002.807382 ko
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