Analytical modeling of realistic single-electron transistors based on metal-oxide-semiconductor structure with a unique distribution function in the Coulomb-Blockade oscillation region

Abstract

Novel metal-oxide-semiconductor (MOS)-based single-electron transistors (MOSETs) using band-to-band tunneling mechanism have been fabricated by the conventional silicon-on-insulator (SOI) MOSFET technologies. The fabricated SETs have tunnel barriers and quantum-dot formed by an extremely small channel between two p+-n+ tunnel junctions in the degenerately doped SOI MOSFET. Coulomb oscillation was observed in the subthreshold region at liquid nitrogen temperature and total capacitance of quantum-dot is 2.25 aF which is well matched to the device geometry. In order to validate the operation principle of our device, we have implemented an analytical device model in the simulation program with integrated circuit emphasis (SPICE). SPICE simulation of our model with a unique distribution function has reproduced the experimental results with good agreement for wide gate and drain bias range.