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Kim, Kyung Rok
Nano-Electronic Emerging Devices (NEEDs) Lab
Research Interests
  • Nano-CMOS, neuromorphic device, terahertz (THz) plasma-wave transistor (PWT)

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Silicon-based field-induced band-to-band tunneling effect transistor

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dc.contributor.author Kim, Kyung Rok ko
dc.contributor.author Kim, DH ko
dc.contributor.author Song, KW ko
dc.contributor.author Baek, G ko
dc.contributor.author Kim, HH ko
dc.contributor.author Huh, JI ko
dc.contributor.author Lee, JD ko
dc.contributor.author Park, BG ko
dc.date.available 2014-10-29T00:21:15Z -
dc.date.created 2014-10-28 ko
dc.date.issued 2004-06 -
dc.identifier.citation IEEE ELECTRON DEVICE LETTERS, v.25, no.6, pp.439 - 441 ko
dc.identifier.issn 0741-3106 ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/7916 -
dc.identifier.uri http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=2942756151 ko
dc.description.abstract This letter reports a silicon-based field-induced band-to-band tunneling effect transistor (FIBTET), which has a structure totally compatible with silicon-on-insulator (SOI) MOSFET. The field-induced band-to-band tunneling effect between degenerate channel and source/drain is used as the key principle of the device operation. FIBTETs demonstrate the controllable negative differential transconductance characteristics at room temperature both for n-FIBTETs and p-FIBTETs. The size dependence of the device characteristics shows that the peak tunneling current can be controlled by the layout design of channel length and width. ko
dc.description.statementofresponsibility close -
dc.language ENG ko
dc.publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC ko
dc.subject Band-to-band tunneling ko
dc.subject Degenerate ko
dc.subject FIBTET ko
dc.subject Negative differential transconductance ko
dc.subject SOI MOSFET ko
dc.title Silicon-based field-induced band-to-band tunneling effect transistor ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-2942756151 ko
dc.identifier.wosid 000221659700032 ko
dc.type.rims ART ko
dc.description.wostc 8 *
dc.description.scopustc 10 *
dc.date.tcdate 2015-05-06 *
dc.date.scptcdate 2014-10-28 *
dc.identifier.doi 10.1109/LED.2004.829668 ko
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