Silicon-based field-induced band-to-band tunneling effect transistor

Abstract

This letter reports a silicon-based field-induced band-to-band tunneling effect transistor (FIBTET), which has a structure totally compatible with silicon-on-insulator (SOI) MOSFET. The field-induced band-to-band tunneling effect between degenerate channel and source/drain is used as the key principle of the device operation. FIBTETs demonstrate the controllable negative differential transconductance characteristics at room temperature both for n-FIBTETs and p-FIBTETs. The size dependence of the device characteristics shows that the peak tunneling current can be controlled by the layout design of channel length and width.