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- Kim, Kyung Rok
- Nano-Electronic Emerging Devices Lab.
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Negative differential transconductance characteristics and inter-band tunneling mechanism of fabricated FITETs
- Author(s)
- Song, Seung-Hwan, Kim, Jin Ho, Kang, Sangwoo, Lee, Jong Duk, Park, Byung-Gook, Kim, Kyung Rok, Kang, Kwon Chil
- Issued Date
- 2006-12
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.49, no.S3, pp.S790 - S794
- Abstract
- Field-induced inter-band tunneling effect transistors (FITETs) were fabricated, based on a conventional SOI MOSFET technology. Negative differential transconductance (NDT) characteristics and output inter-band tunneling characteristics were observed at room temperature, and these characteristics were explained with inter-band tunneling physics. An inter-band tunneling current of a FITET flows when the energy bands of degenerately doped regions align, and it does not flow when they do not. The energy-band movements in the floating-body region were investigated from device simulation results.
- Publisher
- KOREAN PHYSICAL SOC
- ISSN
- 0374-4884
- Keyword (Author)
- inter-band tunneling, FITET, negative differential transconductance, degenerately doped junctions
- Keyword
- TRANSISTORS, MOSFETS
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