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DC Field | Value | Language |
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dc.citation.endPage | S794 | - |
dc.citation.number | S3 | - |
dc.citation.startPage | S790 | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 49 | - |
dc.contributor.author | Song, Seung-Hwan | - |
dc.contributor.author | Kim, Jin Ho | - |
dc.contributor.author | Kang, Sangwoo | - |
dc.contributor.author | Lee, Jong Duk | - |
dc.contributor.author | Park, Byung-Gook | - |
dc.contributor.author | Kim, Kyung Rok | - |
dc.contributor.author | Kang, Kwon Chil | - |
dc.date.accessioned | 2023-12-22T09:39:32Z | - |
dc.date.available | 2023-12-22T09:39:32Z | - |
dc.date.created | 2014-10-27 | - |
dc.date.issued | 2006-12 | - |
dc.description.abstract | Field-induced inter-band tunneling effect transistors (FITETs) were fabricated, based on a conventional SOI MOSFET technology. Negative differential transconductance (NDT) characteristics and output inter-band tunneling characteristics were observed at room temperature, and these characteristics were explained with inter-band tunneling physics. An inter-band tunneling current of a FITET flows when the energy bands of degenerately doped regions align, and it does not flow when they do not. The energy-band movements in the floating-body region were investigated from device simulation results. | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.49, no.S3, pp.S790 - S794 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.scopusid | 2-s2.0-33846341840 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/7896 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=33846341840 | - |
dc.identifier.wosid | 000243198700021 | - |
dc.language | 영어 | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Negative differential transconductance characteristics and inter-band tunneling mechanism of fabricated FITETs | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | inter-band tunneling | - |
dc.subject.keywordAuthor | FITET | - |
dc.subject.keywordAuthor | negative differential transconductance | - |
dc.subject.keywordAuthor | degenerately doped junctions | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | MOSFETS | - |
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