File Download

There are no files associated with this item.

  • Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
Related Researcher

김경록

Kim, Kyung Rok
Nano-Electronic Emerging Devices Lab.
Read More

Views & Downloads

Detailed Information

Cited time in webofscience Cited time in scopus
Metadata Downloads

Full metadata record

DC Field Value Language
dc.citation.endPage S794 -
dc.citation.number S3 -
dc.citation.startPage S790 -
dc.citation.title JOURNAL OF THE KOREAN PHYSICAL SOCIETY -
dc.citation.volume 49 -
dc.contributor.author Song, Seung-Hwan -
dc.contributor.author Kim, Jin Ho -
dc.contributor.author Kang, Sangwoo -
dc.contributor.author Lee, Jong Duk -
dc.contributor.author Park, Byung-Gook -
dc.contributor.author Kim, Kyung Rok -
dc.contributor.author Kang, Kwon Chil -
dc.date.accessioned 2023-12-22T09:39:32Z -
dc.date.available 2023-12-22T09:39:32Z -
dc.date.created 2014-10-27 -
dc.date.issued 2006-12 -
dc.description.abstract Field-induced inter-band tunneling effect transistors (FITETs) were fabricated, based on a conventional SOI MOSFET technology. Negative differential transconductance (NDT) characteristics and output inter-band tunneling characteristics were observed at room temperature, and these characteristics were explained with inter-band tunneling physics. An inter-band tunneling current of a FITET flows when the energy bands of degenerately doped regions align, and it does not flow when they do not. The energy-band movements in the floating-body region were investigated from device simulation results. -
dc.identifier.bibliographicCitation JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.49, no.S3, pp.S790 - S794 -
dc.identifier.issn 0374-4884 -
dc.identifier.scopusid 2-s2.0-33846341840 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/7896 -
dc.identifier.url http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=33846341840 -
dc.identifier.wosid 000243198700021 -
dc.language 영어 -
dc.publisher KOREAN PHYSICAL SOC -
dc.title Negative differential transconductance characteristics and inter-band tunneling mechanism of fabricated FITETs -
dc.type Article -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor inter-band tunneling -
dc.subject.keywordAuthor FITET -
dc.subject.keywordAuthor negative differential transconductance -
dc.subject.keywordAuthor degenerately doped junctions -
dc.subject.keywordPlus TRANSISTORS -
dc.subject.keywordPlus MOSFETS -

qrcode

Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.