Negative differential transconductance characteristics and inter-band tunneling mechanism of fabricated FITETs

Abstract

Field-induced inter-band tunneling effect transistors (FITETs) were fabricated, based on a conventional SOI MOSFET technology. Negative differential transconductance (NDT) characteristics and output inter-band tunneling characteristics were observed at room temperature, and these characteristics were explained with inter-band tunneling physics. An inter-band tunneling current of a FITET flows when the energy bands of degenerately doped regions align, and it does not flow when they do not. The energy-band movements in the floating-body region were investigated from device simulation results.