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Kim, Kyung Rok
Nano-Electronic Emerging Devices (NEEDs) Lab
Research Interests
  • Nano-CMOS, neuromorphic device, terahertz (THz) plasma-wave transistor (PWT)

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Negative differential transconductance characteristics and inter-band tunneling mechanism of fabricated FITETs

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Title
Negative differential transconductance characteristics and inter-band tunneling mechanism of fabricated FITETs
Author
Song, Seung-HwanKim, Jin HoKang, SangwooLee, Jong DukPark, Byung-GookKim, Kyung RokKang, Kwon Chil
Keywords
Degenerately doped junctions;  FITET;  Inter-band tunneling;  Negative differential transconductance
Issue Date
2006-12
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.49, no., pp.S790 - S794
Abstract
Field-induced inter-band tunneling effect transistors (FITETs) were fabricated, based on a conventional SOI MOSFET technology. Negative differential transconductance (NDT) characteristics and output inter-band tunneling characteristics were observed at room temperature, and these characteristics were explained with inter-band tunneling physics. An inter-band tunneling current of a FITET flows when the energy bands of degenerately doped regions align, and it does not flow when they do not. The energy-band movements in the floating-body region were investigated from device simulation results.
URI
https://scholarworks.unist.ac.kr/handle/201301/7896
ISSN
0374-4884
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