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Kim, Kyung Rok
Nano-Electronic Emerging Devices (NEEDs) Lab
Research Interests
  • Nano-CMOS, neuromorphic device, terahertz (THz) plasma-wave transistor (PWT)

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Modelling of band-to-band tunnelling in silicon-on-insulator transistor with degenerately doped floating body

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Title
Modelling of band-to-band tunnelling in silicon-on-insulator transistor with degenerately doped floating body
Author
Kim, Kyung RokPark, B. -G.Dutton, R. W.
Issue Date
2008-08
Publisher
INST ENGINEERING TECHNOLOGY-IET
Citation
ELECTRONICS LETTERS, v.44, no.18, pp.1089 - U58
Abstract
Numerical simulations based on a novel band-to-band tunnelling model and DC quasi-stationary method have been performed for a field-induced inter-band tunnelling effect transistor with a degenerately doped floating body and source/drain tunnel junction. Carrier injection through the tunnel junctions into a floating body is responsible for negative-differential conductance as well as negative-differential trans-conductance. Simulation results for various device structures show that a gate field-effect on the tunnel junctions is a key design factor to improve device characteristics.
URI
https://scholarworks.unist.ac.kr/handle/201301/7887
DOI
10.1049/el:20082134
ISSN
0013-5194
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