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- Kim, Kyung Rok
- Nano-Electronic Emerging Devices Lab.
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.endPage | U58 | - |
| dc.citation.number | 18 | - |
| dc.citation.startPage | 1089 | - |
| dc.citation.title | ELECTRONICS LETTERS | - |
| dc.citation.volume | 44 | - |
| dc.contributor.author | Kim, Kyung Rok | - |
| dc.contributor.author | Park, B. -G. | - |
| dc.contributor.author | Dutton, R. W. | - |
| dc.date.accessioned | 2023-12-22T08:37:39Z | - |
| dc.date.available | 2023-12-22T08:37:39Z | - |
| dc.date.created | 2014-10-27 | - |
| dc.date.issued | 2008-08 | - |
| dc.description.abstract | Numerical simulations based on a novel band-to-band tunnelling model and DC quasi-stationary method have been performed for a field-induced inter-band tunnelling effect transistor with a degenerately doped floating body and source/drain tunnel junction. Carrier injection through the tunnel junctions into a floating body is responsible for negative-differential conductance as well as negative-differential trans-conductance. Simulation results for various device structures show that a gate field-effect on the tunnel junctions is a key design factor to improve device characteristics. | - |
| dc.identifier.bibliographicCitation | ELECTRONICS LETTERS, v.44, no.18, pp.1089 - U58 | - |
| dc.identifier.doi | 10.1049/el:20082134 | - |
| dc.identifier.issn | 0013-5194 | - |
| dc.identifier.scopusid | 2-s2.0-50849101068 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/7887 | - |
| dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=50849101068 | - |
| dc.identifier.wosid | 000259154600029 | - |
| dc.language | 영어 | - |
| dc.publisher | INST ENGINEERING TECHNOLOGY-IET | - |
| dc.title | Modelling of band-to-band tunnelling in silicon-on-insulator transistor with degenerately doped floating body | - |
| dc.type | Article | - |
| dc.description.journalRegisteredClass | scopus | - |
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