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Kim, Kyung Rok
Nano-Electronic Emerging Devices (NEEDs) Lab
Research Interests
  • Nano-CMOS, neuromorphic device, terahertz (THz) plasma-wave transistor (PWT)

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Numerical band-to-band tunnelling model for radio-frequency silicon tunnel diode with negative-differential resistance

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Title
Numerical band-to-band tunnelling model for radio-frequency silicon tunnel diode with negative-differential resistance
Author
Kim, Kyung RokPark, B. -G.Dutton, R. W.
Keywords
Continuity equations;  Device simulations;  Differential resistances;  Junction capacitances;  Ndr devices;  Negative differential resistances;  Numerical device simulations;  Tunnelling currents
Issue Date
2008-11
Publisher
INST ENGINEERING TECHNOLOGY-IET
Citation
ELECTRONICS LETTERS, v.44, no.23, pp.1379 - +
Abstract
The low resistive band-to-band tunnelling (BTBT) model has been developed for radio-frequency (RF) silicon negative differential resistance (NDR) device simulation on the TCAD platform. The BTBT mechanism in a forward-biased tunnel junction is modelled based on a generation-recombination term in a continuity equation by considering a spatially varying electric field through the tunnelling distance. Using this model, DC/AC characteristics of silicon NDR devices have been successfully described on a numerical device simulation platform. The calculated speed index from the junction capacitance and peak tunnelling current of the tunnel diode shows good agreement with experiments.
URI
https://scholarworks.unist.ac.kr/handle/201301/7886
DOI
10.1049/el:20082737
ISSN
0013-5194
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