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Kim, Kyung Rok
Nano-Electronic Emerging Devices Lab.
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dc.citation.endPage + -
dc.citation.number 23 -
dc.citation.startPage 1379 -
dc.citation.title ELECTRONICS LETTERS -
dc.citation.volume 44 -
dc.contributor.author Kim, Kyung Rok -
dc.contributor.author Park, B. -G. -
dc.contributor.author Dutton, R. W. -
dc.date.accessioned 2023-12-22T08:36:06Z -
dc.date.available 2023-12-22T08:36:06Z -
dc.date.created 2014-10-27 -
dc.date.issued 2008-11 -
dc.description.abstract The low resistive band-to-band tunnelling (BTBT) model has been developed for radio-frequency (RF) silicon negative differential resistance (NDR) device simulation on the TCAD platform. The BTBT mechanism in a forward-biased tunnel junction is modelled based on a generation-recombination term in a continuity equation by considering a spatially varying electric field through the tunnelling distance. Using this model, DC/AC characteristics of silicon NDR devices have been successfully described on a numerical device simulation platform. The calculated speed index from the junction capacitance and peak tunnelling current of the tunnel diode shows good agreement with experiments. -
dc.identifier.bibliographicCitation ELECTRONICS LETTERS, v.44, no.23, pp.1379 - + -
dc.identifier.doi 10.1049/el:20082737 -
dc.identifier.issn 0013-5194 -
dc.identifier.scopusid 2-s2.0-55349145257 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/7886 -
dc.identifier.url http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=55349145257 -
dc.identifier.wosid 000261150200029 -
dc.language 영어 -
dc.publisher INST ENGINEERING TECHNOLOGY-IET -
dc.title Numerical band-to-band tunnelling model for radio-frequency silicon tunnel diode with negative-differential resistance -
dc.type Article -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordPlus MOLECULAR-BEAM EPITAXY -

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