dc.citation.endPage |
+ |
- |
dc.citation.number |
23 |
- |
dc.citation.startPage |
1379 |
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dc.citation.title |
ELECTRONICS LETTERS |
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dc.citation.volume |
44 |
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dc.contributor.author |
Kim, Kyung Rok |
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dc.contributor.author |
Park, B. -G. |
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dc.contributor.author |
Dutton, R. W. |
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dc.date.accessioned |
2023-12-22T08:36:06Z |
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dc.date.available |
2023-12-22T08:36:06Z |
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dc.date.created |
2014-10-27 |
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dc.date.issued |
2008-11 |
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dc.description.abstract |
The low resistive band-to-band tunnelling (BTBT) model has been developed for radio-frequency (RF) silicon negative differential resistance (NDR) device simulation on the TCAD platform. The BTBT mechanism in a forward-biased tunnel junction is modelled based on a generation-recombination term in a continuity equation by considering a spatially varying electric field through the tunnelling distance. Using this model, DC/AC characteristics of silicon NDR devices have been successfully described on a numerical device simulation platform. The calculated speed index from the junction capacitance and peak tunnelling current of the tunnel diode shows good agreement with experiments. |
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dc.identifier.bibliographicCitation |
ELECTRONICS LETTERS, v.44, no.23, pp.1379 - + |
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dc.identifier.doi |
10.1049/el:20082737 |
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dc.identifier.issn |
0013-5194 |
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dc.identifier.scopusid |
2-s2.0-55349145257 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/7886 |
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dc.identifier.url |
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=55349145257 |
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dc.identifier.wosid |
000261150200029 |
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dc.language |
영어 |
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dc.publisher |
INST ENGINEERING TECHNOLOGY-IET |
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dc.title |
Numerical band-to-band tunnelling model for radio-frequency silicon tunnel diode with negative-differential resistance |
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dc.type |
Article |
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dc.description.journalRegisteredClass |
scopus |
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dc.subject.keywordPlus |
MOLECULAR-BEAM EPITAXY |
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