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DC Field | Value | Language |
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dc.citation.endPage | + | - |
dc.citation.number | 23 | - |
dc.citation.startPage | 1379 | - |
dc.citation.title | ELECTRONICS LETTERS | - |
dc.citation.volume | 44 | - |
dc.contributor.author | Kim, Kyung Rok | - |
dc.contributor.author | Park, B. -G. | - |
dc.contributor.author | Dutton, R. W. | - |
dc.date.accessioned | 2023-12-22T08:36:06Z | - |
dc.date.available | 2023-12-22T08:36:06Z | - |
dc.date.created | 2014-10-27 | - |
dc.date.issued | 2008-11 | - |
dc.description.abstract | The low resistive band-to-band tunnelling (BTBT) model has been developed for radio-frequency (RF) silicon negative differential resistance (NDR) device simulation on the TCAD platform. The BTBT mechanism in a forward-biased tunnel junction is modelled based on a generation-recombination term in a continuity equation by considering a spatially varying electric field through the tunnelling distance. Using this model, DC/AC characteristics of silicon NDR devices have been successfully described on a numerical device simulation platform. The calculated speed index from the junction capacitance and peak tunnelling current of the tunnel diode shows good agreement with experiments. | - |
dc.identifier.bibliographicCitation | ELECTRONICS LETTERS, v.44, no.23, pp.1379 - + | - |
dc.identifier.doi | 10.1049/el:20082737 | - |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.scopusid | 2-s2.0-55349145257 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/7886 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=55349145257 | - |
dc.identifier.wosid | 000261150200029 | - |
dc.language | 영어 | - |
dc.publisher | INST ENGINEERING TECHNOLOGY-IET | - |
dc.title | Numerical band-to-band tunnelling model for radio-frequency silicon tunnel diode with negative-differential resistance | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | MOLECULAR-BEAM EPITAXY | - |
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